Products

Power Modules

The modules package concept has now gained acceptance as it offers compact and easy to handle designs. The semiconductor junctions are electrically isolated from the base allowing common heatsinks and compact designs. The insulating materials used between chip and base is carefully chosen so that the impedance is minimised. The Hirect range extends upto 350 amps and 2200 volts and is available in Diode-Diode, Diode-Thyristor and Thyristor-Thyristor configurations.
The required circuit such as single phase bridges, 3 phase bridges and AC Regulators can be assembled with ease and flexibility using two or more such modules. The modules can be used in almost all applications where stud base or capsules devices were being used in the past.

TT / TD Modules (Isolated Base)
Device Type	I_Tav	I_T(RMS)	I_TSM 10mS T_jmax	I_DSM& I_RRM	V_{o (Typ)}	T_Jmax
	A	A	A	A	mA	ºC
HTT/HTD25N	25	40	0.46	10	1.00	125
HTT/HTD55N	55	85	1.25	20	0.90	125
HTT/HTD90N	90	141	1.80	30	0.85	130
HTT/HTD105N	105	160	2.20	20	0.85	125
HTT/HTD132N	131	205	3.20	25	0.85	125
HTT/HTD162N	162	260	4.40	30	0.85	125
HTT/HTD170N	170	350	4.60	50	0.95	125
HTT/HTD250N	250	410	7.00	50	0.80	125

DD Modules (Isolated Base)
Device Type	I_Tav	I_T(RMS)	I_TSM 10mS T_jmax	I_DSM& I_RRM	V_{o (Typ)}	T_Jmax
	A	A	A	A	mA	ºC
HDD25N	25	40	0.46	10	1.00	125
HDD	55	85	1.25	20	0.90	125
HDD	90	141	1.80	30	0.85	130
HDD	105	160	2.20	20	0.85	125
HDD	131	205	3.20	25	0.85	125
HDD	162	260	4.40	30	0.85	125
HDD	170	350	4.60	50	0.95	125
HDD	250	410	7.00	50	0.80	125

3 Thyristors Modules (Non - Isolated Base)
Device Type	I_Tav	I_T(RMS)	I_TSM 10mS T_jmax	I_DSM& I_RRM	V_{o (Typ)}	T_Jmax
	V	A	A	A	mA	V
H3T100N	100	157	3200	12	0.84	125
H3T130N	130	204	3200	25	0.80	125